专利名称：Method of processing a semiconductor
wafer
发明人：Achim Gratz,Scott David Wallace,Tobias
Jacobs
申请号：US14631206申请日：20150225公开号：US09401343B2公开日：20160726
专利附图：
摘要：A method of processing a semiconductor wafer includes forming semiconductordies in the semiconductor wafer, each die having an active region containing devices of an
integrated circuit and an edge region surrounding the active region, adjacent ones of thedies being separated by a scribe line. The method further includes forming interconnectwiring over the active region of each semiconductor die in an interlayer dielectric, formingancillary wiring over the edge region of each die in the interlayer dielectric, forming apassivation on the interlayer dielectric, forming bond pads over the interconnect wiring ofeach die, the bond pads of each die being in electrical connection with the interconnectwiring of that die, and forming additional bond pads over the ancillary wiring of eachsemiconductor die, the additional bond pads of each die being in electrical connectionwith the interconnect wiring of that die.
申请人：Infineon Technologies AG
地址：Neubiberg DE
国籍：DE
代理机构：Murphy, Bilak & Homiller, PLLC
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