Method for forming interconnect structure

专利名称：Method for forming interconnect structure发明人：Bor-Zen Tien,Jhu-Ming Song,Hsuan-Han

Lin,Kuang-Hsin Chen,Mu-Yi Lin,Tzong-ShengChang

申请号：US14918316申请日：20151020公开号：US09716034B2公开日：20170725

专利附图：

摘要：A method comprises forming a plurality of interconnect components over agate structure, wherein a bottom metal line of the interconnect components is

connected to the gate structure through a gate plug, depositing a dielectric layer over atop metal line of the interconnect components, forming an opening in the dielectric layer,depositing a first barrier layer on a bottom and sidewalls of the opening using a non-plasma based deposition process, depositing a second barrier layer over the first barrierlayer using a plasma based deposition process and forming a pad in the opening.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Slater Matsil, LLP

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