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PLASMA PROCESSING APPARATUS AND CONTROL METHOD

2021-06-14 来源:我们爱旅游
专利内容由知识产权出版社提供

专利名称:PLASMA PROCESSING APPARATUS AND

CONTROL METHOD

发明人:Ryota SAKANE申请号:US15413631申请日:20170124

公开号:US20170213703A1公开日:20170727

专利附图:

摘要:The plasma processing apparatus includes a first electrode to which highfrequency power is applied, a second electrode that functions as a counter electrodewith respect to the first electrode, and a controller configured to control distribution of

plasma generated between the first electrode and the second electrode. The firstelectrode is, for example, an upper electrode. The second electrode includes a lowerelectrode, and a peripheral portion disposed around the lower electrode. The peripheralportion includes a plurality of split electrodes divided in a peripheral direction. For eachsplit electrode, the controller controls an impedance between the plasma and a groundvia the split electrode.

申请人:TOKYO ELECTRON LIMITED

地址:Tokyo JP

国籍:JP

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