专利名称:PLASMA PROCESSING APPARATUS AND
CONTROL METHOD
发明人:Ryota SAKANE申请号:US15413631申请日:20170124
公开号:US20170213703A1公开日:20170727
专利附图:
摘要:The plasma processing apparatus includes a first electrode to which highfrequency power is applied, a second electrode that functions as a counter electrodewith respect to the first electrode, and a controller configured to control distribution of
plasma generated between the first electrode and the second electrode. The firstelectrode is, for example, an upper electrode. The second electrode includes a lowerelectrode, and a peripheral portion disposed around the lower electrode. The peripheralportion includes a plurality of split electrodes divided in a peripheral direction. For eachsplit electrode, the controller controls an impedance between the plasma and a groundvia the split electrode.
申请人:TOKYO ELECTRON LIMITED
地址:Tokyo JP
国籍:JP
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