Method for fabricating semiconductor device with s

专利名称：Method for fabricating semiconductor

device with step gated asymmetric recess

发明人：Seung-Bum Kim,Jae-Young Kim申请号：US11400296申请日：20060407

公开号：US20070004152A1公开日：20070104

专利附图：

摘要：A method for fabricating a semiconductor device with a step gated asymmetricrecess is provided. The method includes: forming an organic bottom anti-reflectivecoating (BARC) layer over a substrate; forming a patterned mask over the organic BARC

layer that expose selected portions of the organic BARC layer; etching the exposedportions of the organic BARC layer using an etch gas with high selectivity to the substrateuntil the substrate underlying the exposed portions of the organic BARC layer issubstantially exposed; etching the exposed portions of the substrate to form a pluralityof recessed active regions; removing the mask and the organic BARC layer to expose aplurality of protruding active regions defined by the recessed active regions; forming agate insulation layer over the recessed active regions and the protruding active regions;and forming asymmetric step-structured gates over the gate insulation layer, each gateextending over the corresponding recessed active region and the correspondingprotruding active region.

申请人：Seung-Bum Kim,Jae-Young Kim

地址：Kyoungki-do KR,Kyoungki-do KR

国籍：KR,KR

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