BUZ 22
SIPMOS ® Power Transistor
• N channel
• Enhancement mode• Avalanche-rated
Pin 1G
Pin 2D
Pin 3S
TypeBUZ 22
VDS100 V
ID34 A
RDS(on)0.055 Ω
PackageTO-220 AB
Ordering CodeC67078-S1333-A2
Maximum RatingsParameter
Continuous drain current
Symbol
Values 34
UnitA
IDIDpuls
136
TC = 27 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by TjmaxAvalanche energy, single pulse
IAREAREAS
34 15
mJ
ID = 34 A, VDD = 25 V, RGS = 25 ΩL = 285.5 µH, Tj = 25 °CGate source voltagePower dissipation
220
VGSPtot
± 20 125
VW
TC = 25 °C
Operating temperatureStorage temperature
Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040IEC climatic category, DIN IEC 68-1
Semiconductor Group
TjTstgRthJC RthJA
-55 ... + 150 -55 ... + 150≤ 1 75E 55 / 150 / 56
°CK/W
107/96
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BUZ 22
Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Valuestyp.
max.
Unit
V(BR)DSS
100
- 3 0.1 10 10 0.05
- 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °CGate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
-- 1 100
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °CVDS = 100 V, VGS = 0 V, Tj = 125 °CGate-source leakage current
IGSS
- 100
nAΩ
- 0.055
VGS = 20 V, VDS = 0 VDrain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 22 A
Semiconductor Group
207/96
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BUZ 22
Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter
Symbol
min.
Dynamic CharacteristicsTransconductance
Valuestyp.
max.
Unit
gfs
10
17.5 1400 450 230
-
SpF
- 1850 700 370
ns
- 20
30
VDS≥ 2 * ID * RDS(on)max, ID = 22 AInput capacitance
CissCoss
-
VGS = 0 V, VDS = 25 V, f = 1 MHzOutput capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHzReverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHzTurn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 3 ARGS = 50 ΩRise time
tr
- 80
120
VDD = 30 V, VGS = 10 V, ID = 3 ARGS = 50 ΩTurn-off delay time
td(off)
- 230
300
VDD = 30 V, VGS = 10 V, ID = 3 ARGS = 50 ΩFall time
tf
- 120
160
VDD = 30 V, VGS = 10 V, ID = 3 ARGS = 50 Ω
Semiconductor Group
307/96
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BUZ 22
Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward currentISTC = 25 °C
Inverse diode direct current,pulsed
A
---- 1.4 130 0.7
34 136
V
- 1.8
ns
--µC
--Valuestyp.
max.
Unit
ISMVSDtrrQrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 68 AReverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µsReverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
407/96
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Power dissipation Ptot = ƒ(TC)
130 W 110
Ptot
100 90 80 70 60 50 40 30 20 10 0 0
20
40
60
80
100
120
°C
160
TC
Safe operating area ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3 A IDt p = 23.0µs10 2 D I / VS D 100 µs = ) n o ( RSD 1 ms10 1 10 ms10 0 DC 10 0 10 1 V 10 2 VDSSemiconductor Group
5BUZ 22
Drain current ID = ƒ(TC)
parameter: VGS ≥ 10 V
36 A ID
28 24 20 16 12 8 4 0 0
20406080100120°C160
TC
Transient thermal impedance Zth JC = ƒ(tp)
parameter: D = tp / T10 1 K/W 10 0 ZthJC
10 -1 10 -2 D = 0.500.2010 -3 0.100.050.0210 -4 single pulse0.0110 -5 10
-7 10
-6 10
-5 10
-4 10
-3 10
-2 10 -1 s 10
0
tp
07/96
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Typ. output characteristics ID = ƒ(VDS)
parameter: tp = 80 µs
75 Ptot = 125WlA kji65 VIhGS [V] D
60 a4.055 b4.550 gc5.0d5.545 fe6.040 f6.57.035 egh7.530 i8.0d25 j9.0k10.020 cl20.015 10 b5 a0 0
1234567V9VDSTyp. transfer characteristics ID = f (VGS)parameter: tp = 80 µsVDS≥2 x ID x RDS(on)max
75 A 65
ID
60 55 50 45 40 35 30 25 20 15 10 5 0 0
12345678V10
VGS
Semiconductor Group
6BUZ 22
Typ. drain-source on-resistance RDS (on) = ƒ(ID)parameter: VGS
0.17 abcdefgΩ R0.14 DS (on)
0.12 0.10 0.08 h0.06 ijk0.04 0.02 VGS [V] = abcdefghijk4.04.55.05.56.06.57.07.58.09.010.020.00.00 0
1020304050A70
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,VDS≥2 x ID x RDS(on)max
22 S g18 fs
16 14 12 10 8 6 4 2
0 0
1020304050
A70
ID
07/96
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Drain-source on-resistance RDS (on) = ƒ(Tj)
parameter: ID = 22 A, VGS = 10 V
0.17 Ω R0.14 DS (on)
0.12 0.10 0.08 98%typ0.06 0.04 0.02 0.00 -60
-202060100°C160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1 nF C
10 0 CissCossCrss10 -1 10 -2 0
51015202530
V40VDS
Semiconductor Group
7BUZ 22
Gate threshold voltage VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6 V 98%4.0 VGS(th)
3.6 3.2 typ2.8 2.4 2% 2.0 1.6 1.2 0.8 0.4 0.0 -60
-20
20
60
100
°C
160
Tj
Forward characteristics of reverse diode IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3 A IF
10 2 10 1 Tj = 25 °C typTj = 150 °C typTj = 25 °C (98%)Tj = 150 °C (98%)10 0 0.0
0.40.81.21.62.02.4V3.0
VSD
07/96
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Avalanche energy EAS = ƒ(Tj)parameter: ID = 34 A, VDD = 25 VRGS = 25 Ω, L = 285.5 µH
240 mJ
200
EAS
180 160
140 120 100
80 60 40
20 0 20
40
60
80
100
120
°C
160
TjDrain-source breakdown voltage V(BR)DSS = ƒ(Tj)
120 V 116
V(BR)DSS114
112 110 108 106 104 102 100 98 96 94 92
90 -60
-202060100°C160
Tj
Semiconductor Group
8BUZ 22
Typ. gate charge VGS = ƒ(QGate)
parameter: ID puls = 51 A
16 V VGS
12 0,2 VDS max0,8 V10 DS max8 6 4 2 0 0
10
20
304050607080nC100
QGate
07/96
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BUZ 22
Package OutlinesTO-220 ABDimension in mmSemiconductor Group
9
07/96
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