Method of measuring thickness of thin layer in sem

专利名称：Method of measuring thickness of thin layer

in semiconductor device and apparatus forperforming method

发明人：Whan Namkoong申请号：US11475933申请日：20060628公开号：US07466428B2公开日：20081216

专利附图：

摘要：A method of measuring the thickness of a thin layer formed on a substratecomprises generating a measured signal spectrum by reflecting a light off of the thin

layer and analyzing a resulting reflected light. The method further comprises generatinga theoretical signal spectrum based on a putative thickness of the thin layer, andcomputing a skew signal spectrum as a difference between the measured signalspectrum and the theoretical spectrum. The method still comprises computing areliability index by dividing a reference index by an area of the skew signal spectrum andusing the reliability index to update the theoretical signal spectrum in a regression fittingprocess.

申请人：Whan Namkoong

地址：Seoul KR

国籍：KR

代理机构：Volentine & Whitt, PLLC

更多信息请下载全文后查看