专利名称：MULTI-TIERED SEMICONDUCTOR DEVICES
AND ASSOCIATED METHODS
发明人：Nishant Sinha申请号：US13165546申请日：20110621
公开号：US20120326221A1公开日：20121227
专利附图：
摘要：Methods of fabricating multi-tiered semiconductor devices are described, alongwith apparatus and systems that include them. In one such method, a first dielectric isformed, and a second dielectric is formed in contact with the first dielectric. A channel is
formed through the first dielectric and the second dielectric with a first etch chemistry, avoid is formed in the first dielectric with a second etch chemistry, and a device is formedat least partially in the void in the first dielectric. Additional embodiments are alsodescribed.
申请人：Nishant Sinha
地址：Boise ID US
国籍：US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容