专利名称：SRAM cell using a CMOS compatible high
gain gated lateral BJT
发明人：Ming-Jer Chen,Tzuen-Hsi Huang申请号：US08/418485申请日：19950407公开号：US05594683A公开日：19970114
摘要：This invention presents a new SRAM cell comprising only two MOSFETs: one isthe access device for data transfer; and the other is operated as a high gain gated lateralBJT in the reverse base current mode so as to constitute the role of the storage flip-flopor latch. This invention also requires only one-sided peripheral circuitry for Read/Writefunction. Thus the chip area is greatly saved. In addition, the invention is fully compatiblewith the existing low-cost, high-yield standard CMOS process.
申请人：CHEN; MING-JER,HUANG; TZUEN-HSI
代理人：Bo-In Lin
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